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SQ4153EY-T1_GE3

SQ4153EY-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ4153EY-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
283 ns
Forward Transconductance - Min
54 S
Id - Continuous Drain Current
25 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
7.1 W
Product Type
MOSFET
Qg - Gate Charge
151 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
5.1 mOhms
Rise Time
168 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
310 ns
Typical Turn-On Delay Time
31 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
12 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
900 mV

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Received, Fast shipping, not checked yet
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Hello! Order received, very happy. Thank you very much!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Decent quality, not минвелл certainly, but enough decent
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Aiheeseen liittyvät avainsanat SQ41

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  • SQ4153EY-T1_GE3 PDF-tietosivu
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