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SQ4182EY-T1_GE3

SQ4182EY-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ4182EY-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Forward Transconductance - Min
107 S
Id - Continuous Drain Current
32 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
7.1 W
Product Type
MOSFET
Qg - Gate Charge
110 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
3.1 mOhms
Rise Time
10 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
57 ns
Typical Turn-On Delay Time
16 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Yes, they are all here. :)
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Goods came in two weeks. Well packed. Track number tracked
Shipping a little 1 weeks, normal packing, the procedure is complete.
the photo in comparison with cheap. Delivery fast
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Aiheeseen liittyvät avainsanat SQ41

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  • SQ4182EY-T1_GE3 PDF-tietosivu
  • SQ4182EY-T1_GE3 Datalehdet
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