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SQ3426AEEV-T1_GE3

SQ3426AEEV-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ3426AEEV-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
4 ns
Forward Transconductance - Min
21 S
Id - Continuous Drain Current
7 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
14 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
32 mOhms
Rise Time
10 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
7 ns
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Thanks for your feedback!
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
packed pretty good, all is ok,-seller.
Perfectly.
Everything is excellent! recommend this seller!
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Aiheeseen liittyvät avainsanat SQ34

  • SQ3426AEEV-T1_GE3 Integroitu
  • SQ3426AEEV-T1_GE3 RoHS
  • SQ3426AEEV-T1_GE3 PDF-tietosivu
  • SQ3426AEEV-T1_GE3 Datalehdet
  • SQ3426AEEV-T1_GE3 Osa
  • SQ3426AEEV-T1_GE3 Ostaa
  • SQ3426AEEV-T1_GE3 Jakelija
  • SQ3426AEEV-T1_GE3 PDF
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  • SQ3426AEEV-T1_GE3 Tekniset tiedot

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