IGP30N60H3

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tekniset tiedot

Luokat
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
60 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Operating Temperature Range
- 40 C to + 175 C
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
187 W
Product Type
IGBT Transistors
Series
HighSpeed 3
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Uusimmat arvostelut

Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

Everything is excellent! recommend this seller!

Decent quality, not минвелл certainly, but enough decent

fast delivery

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