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IGP30N65F5XKSA1

IGP30N65F5XKSA1
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tekniset tiedot

Luokat
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
Single
Continuous Collector Current at 25 C
55 A
Continuous Collector Current Ic Max
35 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
188 W
Product Type
IGBT Transistors
Series
TRENCHSTOP 5 F5
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Quickly came to CET, all in one package. Look at the rules
packed pretty good, all is ok,-seller.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
all is well. checked work. seller recommend.
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Aiheeseen liittyvät avainsanat IGP3

  • IGP30N65F5XKSA1 Integroitu
  • IGP30N65F5XKSA1 RoHS
  • IGP30N65F5XKSA1 PDF-tietosivu
  • IGP30N65F5XKSA1 Datalehdet
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  • IGP30N65F5XKSA1 Jakelija
  • IGP30N65F5XKSA1 PDF
  • IGP30N65F5XKSA1 Component
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  • IGP30N65F5XKSA1 Lataa PDF
  • IGP30N65F5XKSA1 Lataa tiedot
  • IGP30N65F5XKSA1 Toimittaa
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  • IGP30N65F5XKSA1 Tekniset tiedot

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