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SQ1464EEH-T1_GE3

SQ1464EEH-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ1464EEH-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 60V Vds; +/-8V Vgs SOT-363/SC-70
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
7 ns
Forward Transconductance - Min
5.5 S
Id - Continuous Drain Current
440 mA
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
0.43 W
Product Type
MOSFET
Qg - Gate Charge
4.1 nC
Rds On - Drain-Source Resistance
1.41 Ohms
Rise Time
21 ns
Technology
SI
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
8 ns
Typical Turn-On Delay Time
12 ns
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
450 mV

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Yes, they are all here. :)
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
fast delivery
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
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Aiheeseen liittyvät avainsanat SQ14

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