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SQ1421EDH-T1_GE3

SQ1421EDH-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ1421EDH-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 60V (D-S) -/+20V AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
9 ns
Forward Transconductance - Min
3 s
Height
1 mm
Id - Continuous Drain Current
1.6 A
Length
2.1 mm
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
2.7 W
Product Type
MOSFET
Qg - Gate Charge
5.4 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
230 mOhms
Rise Time
25 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
13 ns
Typical Turn-On Delay Time
44 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
1.25 mm

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Uusimmat arvostelut

Kirjoita oma Reivew
Teşekkürler
My package arrived wet, not know where occurs this fact, but working all right
Hello! Order received, very happy. Thank you very much!
Everything is fine!
Seems well have not tested
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Aiheeseen liittyvät avainsanat SQ14

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