FF150R12MS4G

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tekniset tiedot

Luokat
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.7 V
Configuration
Dual
Continuous Collector Current at 25 C
225 A
Gate-Emitter Leakage Current
400 nA
Height
17 mm
Length
152 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
Econo D
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
1250 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Width
62 mm

Uusimmat arvostelut

Teşekkürler

fast delivery, item as described, thanks!!

Quick delivery. Secure packing. Excellent product. Thank you

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Works. Find the price of this product is very good

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