Osa numero FF150R12KE3G Luokat IGBT Modules RoHS Datalehdet FF150R12KE3G Kuvaus IGBT Modules 1200V 150A DUAL
Luokat IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 1.7 V Configuration Dual Continuous Collector Current at 25 C 225 A Gate-Emitter Leakage Current 400 nA Height 30.5 mm Length 106.4 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case 62 mm Packaging Tray Part # Aliases Pd - Power Dissipation 780 W Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Unit Weight Width 61.4 mm