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DU28120T

DU28120T
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tekniset tiedot

Luokat
RF MOSFET Transistors
Forward Transconductance - Min
3 s
Gain
13 dB
Id - Continuous Drain Current
24 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Operating Frequency
2 MHz to 175 MHz
Output Power
120 W
Pd - Power Dissipation
269 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Quick delivery. Secure packing. Excellent product. Thank you
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
High Quality driver, works excellent. It came to Moscow for 7 days.
fast delivery
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