DU28120T

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tekniset tiedot

Luokat
RF MOSFET Transistors
Forward Transconductance - Min
3 s
Gain
13 dB
Id - Continuous Drain Current
24 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Operating Frequency
2 MHz to 175 MHz
Output Power
120 W
Pd - Power Dissipation
269 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

Uusimmat arvostelut

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Yes, they are all here. :)

it is safe and sound all, thank you seller!

Decent quality, not минвелл certainly, but enough decent

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

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