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2N2222AUB/TR

2N2222AUB/TR
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
75 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
0.3 V
Configuration
Single
DC Collector/Base Gain hfe Min
30 at 500 mA, 10 V
DC Current Gain hFE Max
325 at 1 mA, 10 V
Emitter- Base Voltage VEBO
6 V
Maximum DC Collector Current
800 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
LCC-3
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
0.5 W
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

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Uusimmat arvostelut

Kirjoita oma Reivew
Takes 8 days to Japan. Good!
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
The goods are OK, thank you dealers.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
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