2N2218

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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
30 V
Collector-Emitter Saturation Voltage
1.6 V
Configuration
Single
Continuous Collector Current
800 mA
DC Collector/Base Gain hfe Min
20 at 150 mA, 1 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
250 MHz
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-39-3
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
800 mW
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN
Unit Weight

Uusimmat arvostelut

Takes 8 days to Japan. Good!

Hello! Order received, very happy. Thank you very much!

Works. Find the price of this product is very good

Goods came in two weeks. Well packed. Track number tracked

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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