Osa numero 2N2432UB Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2432UB Kuvaus Bipolar Transistors - BJT BJTs
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 30 V Collector- Emitter Voltage VCEO Max 30 V Collector-Emitter Saturation Voltage 0.15 mV Configuration Single DC Collector/Base Gain hfe Min 30 DC Current Gain hFE Max 400 Maximum DC Collector Current 100 mA Maximum Operating Temperature + 175 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-18-3 Packaging Waffle Pd - Power Dissipation 600 mW Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN