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2N2432/TR

2N2432/TR
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
30 V
Collector- Emitter Voltage VCEO Max
30 V
Collector-Emitter Saturation Voltage
0.15 mV
Configuration
Single
DC Collector/Base Gain hfe Min
30 at 10 uA, 5 V
DC Current Gain hFE Max
400 at 1 mA, 5 V
Maximum DC Collector Current
100 mA
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-206AA-3
Packaging
Reel
Pd - Power Dissipation
600 mW
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Hello! Order received, very happy. Thank you very much!
Everything is excellent! recommend this seller!
Works. Find the price of this product is very good
Fast shippng. Good quality. I recomend this seller.
Works. Recommend
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