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2N2219Ae4/TR

2N2219Ae4/TR
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
75 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
0.3 V
Configuration
Single
DC Collector/Base Gain hfe Min
50 at 100 uA, 10 V
DC Current Gain hFE Max
325 at 1 mA, 10 V
Emitter- Base Voltage VEBO
6 V
Maximum DC Collector Current
800 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-39-3
Packaging
Reel
Pd - Power Dissipation
3 W
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Received, Fast shipping, not checked yet
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Quickly came to CET, all in one package. Look at the rules
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
High Quality driver, works excellent. It came to Moscow for 7 days.
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2N2219Ae4/TR Uutiset

03/15/2023
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ADG419 LC2MOS Precision Mini-DIP Analog Switch
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MAX306 Precision, 16-Channel/Dual 8-Channel, High-Performance, CMOS Analog Multiplexers
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MAX4514 Low-Voltage, Low-On-Resistance, SPST, CMOS Analog Switches
03/09/2023
MAX4501 Low-Voltage, SPST, CMOS Analog Switches
03/08/2023
ADG721 CMOS, Low Voltage, 4 Ω Dual SPST Switch in 3 mm × 2 mm LFCSP
03/08/2023
ADG719 CMOS 1.8 V to 5.5 V, 2.5Ω 2:1 Mux/SPDT Switch in SOT-23

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