Osa numero 2N2219A Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2219A Kuvaus Bipolar Transistors - BJT BJTs
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 75 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 300 mV Configuration Single DC Collector/Base Gain hfe Min 75 at 1 mA, 10 VDC DC Current Gain hFE Max 325 at 1 mA, 10 VDC Emitter- Base Voltage VEBO 6 V Maximum DC Collector Current 800 mA Maximum Operating Temperature + 200 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case TO-39-3 Packaging Bulk Pd - Power Dissipation 800 mW Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN