Osa numero 2N2270 Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2270 Kuvaus Bipolar Transistors - BJT NPN Hi-Spd SW
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 45 V Collector-Emitter Saturation Voltage 900 mV Configuration Single DC Collector/Base Gain hfe Min 50 DC Current Gain hFE Max 200 Emitter- Base Voltage VEBO 7 V Gain Bandwidth Product fT 100 MHz Height 6.6 mm Length 9.4 mm Maximum DC Collector Current 150 mA Mounting Style Through Hole Package / Case TO-39-3 Packaging Bulk Part # Aliases Product Type BJTs - Bipolar Transistors Series 2N2270 Technology SI Transistor Polarity NPN Unit Weight Width 9.4 mm