- Osa numero
- 2N1711
- Luokat
- Bipolar Transistors - BJT
- RoHS
- Datalehdet
- Kuvaus
- Bipolar Transistors - BJT NPN Ampl/Switch
2N1711
Kuvat ovat vain viitteellisiä
tekniset tiedot
- Luokat
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 75 V
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector-Emitter Saturation Voltage
- 1 V
- Configuration
- Single
- Continuous Collector Current
- 0.5 A
- DC Collector/Base Gain hfe Min
- 60
- DC Current Gain hFE Max
- 100
- Emitter- Base Voltage VEBO
- 7 V
- Gain Bandwidth Product fT
- 70 MHz
- Height
- 6.6 mm
- Length
- 9.4 mm
- Maximum DC Collector Current
- 0.5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- Through Hole
- Package / Case
- TO-39-3
- Packaging
- Bulk
- Part # Aliases
- Pd - Power Dissipation
- 800 mW
- Product Type
- BJTs - Bipolar Transistors
- Series
- 2N1711
- Technology
- SI
- Transistor Polarity
- NPN
- Width
- 9.4 mm
Porduct-luokka
Circuit Protection
157,625 Tuotteet
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2,029,037 Tuotteet
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278,174 Tuotteet
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575,056 Tuotteet
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61,386 Tuotteet
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20,391 Tuotteet
Uusimmat arvostelut
Hello! Order received, very happy. Thank you very much!
Flavia
Everything is excellent! recommend this seller!
Stoyan Chaykov
Works. Find the price of this product is very good
Maxim Krasnov
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Works. Recommend
Rajiv
2N1711 Uutiset
03/14/2023
03/13/2023
03/13/2023
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