Osa numero 2N1700 Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N1700 Kuvaus Bipolar Transistors - BJT NPN SS Power
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 40 V Collector-Emitter Saturation Voltage 1 V Configuration Single DC Collector/Base Gain hfe Min 20 DC Current Gain hFE Max 80 Emitter- Base Voltage VEBO 6 V Height 6.6 mm Length 9.4 mm Mounting Style Through Hole Package / Case TO-39-3 Packaging Bulk Part # Aliases Product Type BJTs - Bipolar Transistors Series 2N1700 Technology SI Transistor Polarity NPN Width 9.4 mm