Osa numero D45H11FP Luokat Bipolar Transistors - BJT RoHS Datalehdet D45H11FP Kuvaus Bipolar Transistors - BJT PNP GEN PUR SWITCH
Luokat Bipolar Transistors - BJT Collector- Emitter Voltage VCEO Max - 80 V Collector-Emitter Saturation Voltage - 1 V Configuration Single Continuous Collector Current - 10 A DC Collector/Base Gain hfe Min 40 Emitter- Base Voltage VEBO - 5 V Maximum DC Collector Current - 20 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case TO-220FP-3 Pd - Power Dissipation 36 W Product Type BJTs - Bipolar Transistors Series D45H11FP Technology SI Transistor Polarity PNP Unit Weight