Osa numero D45H11 Luokat Bipolar Transistors - BJT RoHS Datalehdet D45H11 Kuvaus Bipolar Transistors - BJT PNP Gen Pur Switch
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO - 5 V Collector- Emitter Voltage VCEO Max - 80 V Collector-Emitter Saturation Voltage 1 V Configuration Single Continuous Collector Current - 10 A DC Collector/Base Gain hfe Min 60 Emitter- Base Voltage VEBO - 5 V Height 9.15 mm Length 10.4 mm Maximum DC Collector Current 10 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-220-3 Pd - Power Dissipation 50 W Product Type BJTs - Bipolar Transistors Series D45H11 Technology SI Transistor Polarity PNP Unit Weight Width 4.6 mm