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DN0150BLP4-7

DN0150BLP4-7
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
50 V
Configuration
Single
DC Collector/Base Gain hfe Min
200
DC Current Gain hFE Max
200 at 2 mA, 6 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
60 MHz
Height
0.35 mm
Length
1 mm
Maximum DC Collector Current
0.1 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
DFN-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
450 mW
Product Type
BJTs - Bipolar Transistors
Series
DN0150
Technology
SI
Transistor Polarity
NPN
Width
0.6 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
fast delivery, item as described, thanks!!
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Find the price of this product is very good
fast delivery
Product as shown in the description, excellent seller, I recommend this seller.
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Aiheeseen liittyvät avainsanat DN01

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