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DN0150ALP4-7

DN0150ALP4-7
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
50 V
Configuration
Single
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
120 at 2 mA, 6 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
60 MHz
Height
0.35 mm
Length
1 mm
Maximum DC Collector Current
0.1 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
DFN-3
Packaging
Reel
Pd - Power Dissipation
450 mW
Product Type
BJTs - Bipolar Transistors
Series
DN0150
Technology
SI
Transistor Polarity
NPN
Width
0.6 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Hello! Order received, very happy. Thank you very much!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Decent quality, not минвелл certainly, but enough decent
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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Aiheeseen liittyvät avainsanat DN01

  • DN0150ALP4-7 Integroitu
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  • DN0150ALP4-7 PDF-tietosivu
  • DN0150ALP4-7 Datalehdet
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