2N2222

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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
30 V
Collector-Emitter Saturation Voltage
1.6 V
Configuration
Single
Continuous Collector Current
0.45 A
DC Collector/Base Gain hfe Min
35
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
250 MHz
Height
5.33 mm
Length
5.84 mm
Maximum DC Collector Current
0.8 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-18
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
400 mW
Product Type
BJTs - Bipolar Transistors
Series
2N2222
Technology
SI
Transistor Polarity
NPN
Width
5.84 mm

Uusimmat arvostelut

Teşekkürler

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Hello! Order received, very happy. Thank you very much!

Goods came in two weeks. Well packed. Track number tracked

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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