- Osa numero
- HUF75639G3
- Luokat
- MOSFET
- RoHS
- Datalehdet
- Kuvaus
- MOSFET 56a 100V N-Ch UltraFET .25 Ohm
HUF75639G3
Kuvat ovat vain viitteellisiä
tekniset tiedot
- Luokat
- MOSFET
- Channel Mode
- Enhancement
- Configuration
- Single
- Fall Time
- 25 ns
- Height
- 20.82 mm
- Id - Continuous Drain Current
- 56 A
- Length
- 15.87 mm
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 200 W
- Product Type
- MOSFET
- Rds On - Drain-Source Resistance
- 25 mOhms
- Rise Time
- 60 ns
- Series
- HUF75639G3
- Technology
- SI
- Tradename
- UltraFET
- Transistor Polarity
- N-Channel
- Transistor Type
- 1 N-Channel
- Type
- MOSFET
- Typical Turn-Off Delay Time
- 20 ns
- Typical Turn-On Delay Time
- 15 ns
- Unit Weight
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Vgs - Gate-Source Voltage
- 20 V
- Width
- 4.82 mm
Porduct-luokka
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Uusimmat arvostelut
fast delivery, item as described, thanks!!
Sandra Scheck
fast delivery
Mike Ibarra
Product as shown in the description, excellent seller, I recommend this seller.
Grahame Maxwell
Excellent transaction five star service thank you, we will do business again.
Ashley Stovall
Still not tasted, looks good. Fast Shipping, very good Price. Like again
Nils Dorigoni
Saatat pitää myös
Ihmiset katsovat HUF75639G3 sitten ostivat
HUF75639G3 Uutiset
03/14/2023
03/13/2023
03/13/2023
Aiheeseen liittyvät avainsanat HUF7
- HUF75639G3 Integroitu
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