HUF75631S3ST

Kuvat ovat vain viitteellisiä
Osa numero
HUF75631S3ST
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 100V NCh PowerMOSFET UltraFET

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
55 ns
Height
4.83 mm
Id - Continuous Drain Current
33 A
Length
10.67 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
120 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
40 mOhms
Rise Time
57 ns
Series
HUF75631S3S
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
MOSFET
Typical Turn-Off Delay Time
40 ns
Typical Turn-On Delay Time
9.5 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
20 V
Width
9.65 mm

Uusimmat arvostelut

fast delivery, item as described, thanks!!

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Hello! Order received, very happy. Thank you very much!

packed pretty good, all is ok,-seller.

High Quality driver, works excellent. It came to Moscow for 7 days.

Aiheeseen liittyvät avainsanat HUF7

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