HUF75639S3

Kuvat ovat vain viitteellisiä
Osa numero
HUF75639S3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET TO-262

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
25 ns
Height
7.88 mm
Id - Continuous Drain Current
56 A
Length
10.29 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-262-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
200 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
25 mOhms
Rise Time
60 ns
Series
HUF75639S3
Technology
SI
Tradename
UltraFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
MOSFET
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
15 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
20 V
Width
4.83 mm

Uusimmat arvostelut

it is safe and sound all, thank you seller!

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Long Service and Russia!

and whole all right. the features no more функционалу check.

All very good. AND packed as you have everything in good condition.

Aiheeseen liittyvät avainsanat HUF7

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