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TK16G60W,RVQ

TK16G60W,RVQ
Kuvat ovat vain viitteellisiä
Osa numero
TK16G60W,RVQ
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
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tekniset tiedot

Luokat
MOSFET
Configuration
Single
Fall Time
5 ns
Height
10.4 mm
Id - Continuous Drain Current
15.8 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-262-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
130 W
Product Type
MOSFET
Qg - Gate Charge
38 nC
Rds On - Drain-Source Resistance
190 mOhms
Rise Time
25 ns
Series
TK16G60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.5 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
it is safe and sound all, thank you seller!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Works. Find the price of this product is very good
Decent quality, not минвелл certainly, but enough decent
fast delivery
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Suositut haut

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