Osa numero HUF75639P3 Luokat MOSFET RoHS Datalehdet HUF75639P3 Kuvaus MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm
Luokat MOSFET Channel Mode Enhancement Configuration Single Fall Time 25 ns Height 16.3 mm Id - Continuous Drain Current 56 A Length 10.67 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Tube Part # Aliases Pd - Power Dissipation 200 W Product Type MOSFET Rds On - Drain-Source Resistance 25 mOhms Rise Time 60 ns Series HUF75639P3 Technology SI Tradename UltraFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Type MOSFET Typical Turn-Off Delay Time 20 ns Typical Turn-On Delay Time 15 ns Unit Weight Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage 20 V Width 4.7 mm