HUF75639P3

Kuvat ovat vain viitteellisiä
Osa numero
HUF75639P3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
25 ns
Height
16.3 mm
Id - Continuous Drain Current
56 A
Length
10.67 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
200 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
25 mOhms
Rise Time
60 ns
Series
HUF75639P3
Technology
SI
Tradename
UltraFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
MOSFET
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
15 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
20 V
Width
4.7 mm

Uusimmat arvostelut

all exactly and work. радиолюбителя useful set to, thank you)

Takes 8 days to Japan. Good!

packed pretty good, all is ok,-seller.

Thank You all fine, packed very well

Shipping a little 1 weeks, normal packing, the procedure is complete.

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