Osa numero HUF76609D3ST Luokat MOSFET RoHS Datalehdet HUF76609D3ST Kuvaus MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate
Luokat MOSFET Channel Mode Enhancement Configuration Single Fall Time 28 ns Height 2.39 mm Id - Continuous Drain Current 10 A Length 6.73 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 49 W Product Type MOSFET Qg - Gate Charge 16 nC Rds On - Drain-Source Resistance 130 mOhms Rise Time 41 ns Series HUF76609D3S Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Type MOSFET Typical Turn-Off Delay Time 30 ns Typical Turn-On Delay Time 10 ns Unit Weight Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage 16 V Vgs th - Gate-Source Threshold Voltage 3 V Width 6.22 mm