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SQ4080EY-T1_GE3

SQ4080EY-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ4080EY-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Channel 150V SO-8
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
2.5 ns
Forward Transconductance - Min
51 S
Id - Continuous Drain Current
18 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
7.1 W
Product Type
MOSFET
Qg - Gate Charge
33 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
70 mOhms
Rise Time
3.2 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
19.1 ns
Typical Turn-On Delay Time
11.4 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
150 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Quick delivery. Secure packing. Excellent product. Thank you
packed pretty good, all is ok,-seller.
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Find the price of this product is very good
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Aiheeseen liittyvät avainsanat SQ40

  • SQ4080EY-T1_GE3 Integroitu
  • SQ4080EY-T1_GE3 RoHS
  • SQ4080EY-T1_GE3 PDF-tietosivu
  • SQ4080EY-T1_GE3 Datalehdet
  • SQ4080EY-T1_GE3 Osa
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  • SQ4080EY-T1_GE3 Jakelija
  • SQ4080EY-T1_GE3 PDF
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  • SQ4080EY-T1_GE3 Break Hinta
  • SQ4080EY-T1_GE3 Tekniset tiedot

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