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SQ4005EY-T1_GE3

SQ4005EY-T1_GE3
Kuvat ovat vain viitteellisiä
Osa numero
SQ4005EY-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
30 ns
Forward Transconductance - Min
34 S
Height
1.75 mm
Id - Continuous Drain Current
15 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
6 W
Product Type
MOSFET
Qg - Gate Charge
38 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
13 mOhms
Rise Time
33 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
73 ns
Typical Turn-On Delay Time
19 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
12 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
1 V
Width
3.9 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
fast delivery, item as described, thanks!!
Received, Fast shipping, not checked yet
Quickly came to CET, all in one package. Look at the rules
Takes 8 days to Japan. Good!
Perfectly.
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Aiheeseen liittyvät avainsanat SQ40

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