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FCP22N60N

FCP22N60N
Kuvat ovat vain viitteellisiä
Osa numero
FCP22N60N
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 600V N-Channel SupreMOS
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
4 ns
Forward Transconductance - Min
22 S
Height
16.3 mm
Id - Continuous Drain Current
22 A
Length
10.67 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
205 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
140 mOhms
Rise Time
16.7 ns
Series
FCP22N60N
Technology
SI
Tradename
SupreMOS
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
SupreMOS
Typical Turn-Off Delay Time
49 ns
Typical Turn-On Delay Time
16.9 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Width
4.7 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
all exactly and work. радиолюбителя useful set to, thank you)
High Quality driver, works excellent. It came to Moscow for 7 days.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
fast delivery
the photo in comparison with cheap. Delivery fast
Lisää

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Aiheeseen liittyvät avainsanat FCP2

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Suositut haut

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