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FCP20N60

FCP20N60
Kuvat ovat vain viitteellisiä
Osa numero
FCP20N60
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 600V N-Channel SuperFET
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
65 ns
Forward Transconductance - Min
17 S
Height
16.3 mm
Id - Continuous Drain Current
20 A
Length
10.67 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
208 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
190 mOhms
Rise Time
140 ns
Series
FCP20N60
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
MOSFET
Typical Turn-Off Delay Time
230 ns
Typical Turn-On Delay Time
62 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Width
4.7 mm

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Quickly came to CET, all in one package. Look at the rules
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Everything is excellent! recommend this seller!
fast delivery
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
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Aiheeseen liittyvät avainsanat FCP2

  • FCP20N60 Integroitu
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  • FCP20N60 PDF-tietosivu
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Suositut haut

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