2N2609

Kuvat ovat vain viitteellisiä
Osa numero
2N2609
Luokat
JFET
RoHS
Datalehdet
Kuvaus
JFET JFETs

tekniset tiedot

Luokat
JFET
Configuration
Single
Drain-Source Current at Vgs=0
- 10 mA
Gate-Source Cutoff Voltage
6 V
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-18-3
Packaging
Bulk
Pd - Power Dissipation
300 mW
Product Type
JFETs
Technology
SI
Transistor Polarity
P-Channel
Vgs - Gate-Source Breakdown Voltage
30 V

Uusimmat arvostelut

fast delivery, item as described, thanks!!

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Perfectly.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Goods came in two weeks. Well packed. Track number tracked

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