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2N2604/TR

2N2604/TR
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
80 V
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
0.3 V
Configuration
Single
DC Collector/Base Gain hfe Min
15 at 100 mA, 5 V
DC Current Gain hFE Max
180 at 500 uA, 5 V
Emitter- Base Voltage VEBO
6 V
Maximum DC Collector Current
30 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-46-3
Packaging
Reel
Pd - Power Dissipation
400 mW
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
PNP

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Uusimmat arvostelut

Kirjoita oma Reivew
Thank You all fine, packed very well
Works. Find the price of this product is very good
Decent quality, not минвелл certainly, but enough decent
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Fast shippng. Good quality. I recomend this seller.
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