IGB50N65H5ATMA1

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tekniset tiedot

Luokat
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
Single
Continuous Collector Current at 25 C
80 A
Continuous Collector Current Ic Max
80 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
270 W
Product Type
IGBT Transistors
Series
TRENCHSTOPâ?¢5
Technology
SI
Tradename
TRENCHSTOP

Uusimmat arvostelut

Teşekkürler

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Thank You all fine, packed very well

Everything is fine!

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