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IGB50N65S5ATMA1

IGB50N65S5ATMA1
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tekniset tiedot

Luokat
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.35 V
Configuration
Single
Continuous Collector Current at 25 C
80 A
Continuous Collector Current Ic Max
80 A
Gate-Emitter Leakage Current
50 uA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
270 W
Product Type
IGBT Transistors
Series
TRENCHSTOPâ?¢5
Technology
SI
Tradename
TRENCHSTOP

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
goods very well received very good quality
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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Aiheeseen liittyvät avainsanat IGB5

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