2N2195B

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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
45 V
Collector-Emitter Saturation Voltage
0.18 V
Configuration
Single
DC Collector/Base Gain hfe Min
20 at 150 mA, 10 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
50 MHz
Mounting Style
Through Hole
Package / Case
TO-39-3
Packaging
Bulk
Part # Aliases
Product Type
BJTs - Bipolar Transistors
Series
2N2195B
Technology
SI
Transistor Polarity
NPN

Uusimmat arvostelut

all exactly and work. радиолюбителя useful set to, thank you)

it is safe and sound all, thank you seller!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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