Osa numero 2N2102 Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2102 Kuvaus Bipolar Transistors - BJT NPN Ampl/Switch
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 120 V Collector- Emitter Voltage VCEO Max 65 V Collector-Emitter Saturation Voltage 0.5 V Configuration Single Continuous Collector Current 1 A Emitter- Base Voltage VEBO 7 V Gain Bandwidth Product fT 60 MHz Height 6.6 mm Length 9.4 mm Maximum DC Collector Current 1 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-39-3 Packaging Bulk Part # Aliases Pd - Power Dissipation 1 W Product Type BJTs - Bipolar Transistors Series 2N2102 Technology SI Transistor Polarity NPN Width 9.4 mm