FF150R12KT3G

Kuvat ovat vain viitteellisiä

tekniset tiedot

Luokat
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
Dual
Continuous Collector Current at 25 C
225 A
Gate-Emitter Leakage Current
400 nA
Height
30.9 mm
Length
106.4 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
62 mm
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
780 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Unit Weight
Width
61.4 mm

Uusimmat arvostelut

packed pretty good, all is ok,-seller.

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

High Quality driver, works excellent. It came to Moscow for 7 days.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Works. Recommend

Aiheeseen liittyvät avainsanat FF15

  • FF150R12KT3G Integroitu
  • FF150R12KT3G RoHS
  • FF150R12KT3G PDF-tietosivu
  • FF150R12KT3G Datalehdet
  • FF150R12KT3G Osa
  • FF150R12KT3G Ostaa
  • FF150R12KT3G Jakelija
  • FF150R12KT3G PDF
  • FF150R12KT3G Component
  • FF150R12KT3G ICS
  • FF150R12KT3G Lataa PDF
  • FF150R12KT3G Lataa tiedot
  • FF150R12KT3G Toimittaa
  • FF150R12KT3G toimittaja
  • FF150R12KT3G Hinta
  • FF150R12KT3G Tietolomake
  • FF150R12KT3G Kuva
  • FF150R12KT3G Kuva
  • FF150R12KT3G inventaario
  • FF150R12KT3G kalusto
  • FF150R12KT3G Alkuperäinen
  • FF150R12KT3G halvin
  • FF150R12KT3G Erinomainen
  • FF150R12KT3G Lyijytön
  • FF150R12KT3G määrittely
  • FF150R12KT3G Kuumat tarjoukset
  • FF150R12KT3G Break Hinta
  • FF150R12KT3G Tekniset tiedot