FF200R12KE4

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tekniset tiedot

Luokat
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Configuration
Dual
Continuous Collector Current at 25 C
240 A
Gate-Emitter Leakage Current
400 nA
Height
30.5 mm
Length
106.4 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
62 mm
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
1100 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Unit Weight
Width
61.4 mm

Uusimmat arvostelut

Quick delivery. Secure packing. Excellent product. Thank you

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Shipping a little 1 weeks, normal packing, the procedure is complete.

Fast shippng. Good quality. I recomend this seller.

the photo in comparison with cheap. Delivery fast

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