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2N2222Ae4/TR

2N2222Ae4/TR
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
75 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
0.3 V
Configuration
Single
DC Collector/Base Gain hfe Min
30 at 500 mA, 10 V
DC Current Gain hFE Max
325 at 1 mA, 10 V
Emitter- Base Voltage VEBO
6 V
Maximum DC Collector Current
800 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-206AA-3
Packaging
Reel
Pd - Power Dissipation
0.5 W
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

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Uusimmat arvostelut

Kirjoita oma Reivew
thanks for resending, this item is good !
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
fast delivery, item as described, thanks!!
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Yes, they are all here. :)
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