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2N2484/TR

2N2484/TR
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
0.3 V
Configuration
Single
DC Collector/Base Gain hfe Min
45 at 1 uA, 5 V
DC Current Gain hFE Max
800 at 500 uA, 5 V
Emitter- Base Voltage VEBO
6 V
Maximum DC Collector Current
50 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-206AA-3
Packaging
Reel
Pd - Power Dissipation
360 mW
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

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Uusimmat arvostelut

Kirjoita oma Reivew
Received, Fast shipping, not checked yet
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
High Quality driver, works excellent. It came to Moscow for 7 days.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
The goods are OK, thank you dealers.
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2N2484/TR Uutiset

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MAX306 Precision, 16-Channel/Dual 8-Channel, High-Performance, CMOS Analog Multiplexers
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MAX4501 Low-Voltage, SPST, CMOS Analog Switches
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ADG721 CMOS, Low Voltage, 4 Ω Dual SPST Switch in 3 mm × 2 mm LFCSP
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ADG719 CMOS 1.8 V to 5.5 V, 2.5Ω 2:1 Mux/SPDT Switch in SOT-23

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