2N2222A

tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
75 V
Collector- Emitter Voltage VCEO Max
40 V
Collector-Emitter Saturation Voltage
1 V
Configuration
Single
Continuous Collector Current
800 mA
DC Collector/Base Gain hfe Min
50
DC Current Gain hFE Max
40
Emitter- Base Voltage VEBO
6 V
Gain Bandwidth Product fT
300 MHz
Maximum DC Collector Current
800 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-18-3
Packaging
Ammo Pack
Pd - Power Dissipation
500 mW
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

Uusimmat arvostelut

Received, Fast shipping, not checked yet

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

High Quality driver, works excellent. It came to Moscow for 7 days.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

The goods are OK, thank you dealers.

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