Osa numero 2N2222A Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2222A Kuvaus Bipolar Transistors - BJT TO-18
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 75 V Collector- Emitter Voltage VCEO Max 40 V Collector-Emitter Saturation Voltage 1 V Configuration Single Continuous Collector Current 800 mA DC Collector/Base Gain hfe Min 50 DC Current Gain hFE Max 40 Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 300 MHz Maximum DC Collector Current 800 mA Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-18-3 Packaging Ammo Pack Pd - Power Dissipation 500 mW Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN