Osa numero 2N2219 Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2219 Kuvaus Bipolar Transistors - BJT NPN Ampl/Switch
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 30 V Collector-Emitter Saturation Voltage 1.6 V Configuration Single DC Collector/Base Gain hfe Min 35 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 250 MHz Height 6.6 mm Length 9.4 mm Maximum DC Collector Current 0.8 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-39-3 Packaging Bulk Part # Aliases Pd - Power Dissipation 800 mW Product Type BJTs - Bipolar Transistors Series 2N2219 Technology SI Transistor Polarity NPN Unit Weight Width 9.4 mm