Osa numero 2N2605UB Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2605UB Kuvaus Bipolar Transistors - BJT BJTs
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 70 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 0.3 V Configuration Single Continuous Collector Current 30 mA DC Collector/Base Gain hfe Min 150 DC Current Gain hFE Max 450 Emitter- Base Voltage VEBO 6 V Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-46-3 Packaging Bulk Pd - Power Dissipation 400 mW Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity PNP