2N2605UB

tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
70 V
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
0.3 V
Configuration
Single
Continuous Collector Current
30 mA
DC Collector/Base Gain hfe Min
150
DC Current Gain hFE Max
450
Emitter- Base Voltage VEBO
6 V
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-46-3
Packaging
Bulk
Pd - Power Dissipation
400 mW
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
PNP

Uusimmat arvostelut

Received, Fast shipping, not checked yet

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

High Quality driver, works excellent. It came to Moscow for 7 days.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

The goods are OK, thank you dealers.

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