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2N2219Ae3/TR

2N2219Ae3/TR
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
75 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
0.3 V
Configuration
Single
DC Collector/Base Gain hfe Min
50 at 100 uA, 10 V
DC Current Gain hFE Max
325 at 1 mA, 10 V
Emitter- Base Voltage VEBO
6 V
Maximum DC Collector Current
800 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-39-3
Packaging
Reel
Pd - Power Dissipation
3 W
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
packed pretty good, all is ok,-seller.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Received very good
to seller thank you! all like the photo. not tried operation. seller store recommend.
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