Osa numero 2N2432A/TR Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2432A/TR Kuvaus Bipolar Transistors - BJT BJTs
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 45 V Collector- Emitter Voltage VCEO Max 45 V Collector-Emitter Saturation Voltage 0.15 mV Configuration Single Continuous Collector Current 100 mA DC Collector/Base Gain hfe Min 30 DC Current Gain hFE Max 400 Emitter- Base Voltage VEBO 18 V Gain Bandwidth Product fT - Maximum Operating Temperature + 175 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-18-3 Packaging Reel Packaging Cut Tape Pd - Power Dissipation 300 mW Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN